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IPN50R800CEATMA1

IPN50R800CEATMA1

IPN50R800 - 500V COOLMOS N-CHANN

IPN50R800CEATMA1

IPN50R800CEATMA1

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Part No :

IPN50R800CEATMA1

Manufacturer
Rochester Electronics
Description
IPN50R800 - 500V COOLMOS N-CHANN
Catalog
Transistors - FETs, MOSFETs - Single
Availability
13000 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 29 - Dec 03 2024
PDF
IPN50R800CEATMA1 PDF
Type Description
Series:CoolMOS™ CE
Package:Bulk
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):500 V
Current - Continuous Drain (Id) @ 25°C:7.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On):13V
Rds On (Max) @ Id, Vgs:800mOhm @ 1.5A, 13V
Vgs(th) (Max) @ Id:3.5V @ 130µA
Gate Charge (Qg) (Max) @ Vgs:12.4 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:280 pF @ 100 V
FET Feature:-
Power Dissipation (Max):5W (Tc)
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-SOT223
Package / Case:TO-261-3
IPN50R800CEATMA1 is available at GangBo-ic.com, Please review product page below for detailed information, including IPN50R800CEATMA1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IPN50R800CEATMA1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

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