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FDB5690

FDB5690

MOSFET N-CH 60V 32A TO263AB

FDB5690

FDB5690

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Part No :

FDB5690

Manufacturer
Rochester Electronics
Description
MOSFET N-CH 60V 32A TO263AB
Catalog
Transistors - FETs, MOSFETs - Single
Availability
18503 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 24 - Nov 28 2024
PDF
FDB5690 PDF
Type Description
Series:PowerTrench®
Package:Bulk
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:32A (Tc)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:27mOhm @ 16A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:33 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1.12 pF @ 25 V
FET Feature:-
Power Dissipation (Max):58W (Tc)
Operating Temperature:-65°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-263AB
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
FDB5690 is available at GangBo-ic.com, Please review product page below for detailed information, including FDB5690 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for FDB5690 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

Office Hours : Mon-Fri, 9:00-18:30(GMT+8)

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Phone: 00852-52612101

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