MOSFET P-CH 20V 10A 8SOIC
Type | Description |
---|---|
Series: | PowerTrench® |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Active |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 20 V |
Current - Continuous Drain (Id) @ 25°C: | 10A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 2.5V, 4.5V |
Rds On (Max) @ Id, Vgs: | 13mOhm @ 10A, 4.5V |
Vgs(th) (Max) @ Id: | 1.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 74 nC @ 4.5 V |
Vgs (Max): | ±8V |
Input Capacitance (Ciss) (Max) @ Vds: | 4951 pF @ 10 V |
FET Feature: | - |
Power Dissipation (Max): | 2.5W (Ta) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | 8-SOIC |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
IRF6714MTRPBFRochester Electronics |
MOSFET N-CH 25V 29A/166A DIRECT |
|
MVGSF1N02LT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 20V 750MA SOT23-3 |
|
TK12A80W,S4XToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 800V 11.5A TO220SIS |
|
IRFW620BTMRochester Electronics |
N-CHANNEL POWER MOSFET |
|
SUD50N04-09H-E3Vishay / Siliconix |
MOSFET N-CH 40V 50A TO252 |
|
SQJQ466E-T1_GE3Vishay / Siliconix |
MOSFET N-CH 60V 200A PPAK 8 X 8 |
|
TSM70N600CP ROGTSC (Taiwan Semiconductor) |
MOSFET N-CHANNEL 700V 8A TO252 |
|
SUM45N25-58-E3Vishay / Siliconix |
MOSFET N-CH 250V 45A TO263 |
|
DMN31D5L-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 30V 500MA SOT23 T&R |
|
SQD10950E_GE3Vishay / Siliconix |
MOSFET N-CH 250V 11.5A TO252AA |
|
RCJ220N25TLROHM Semiconductor |
MOSFET N-CH 250V 22A LPTS |
|
AOTF2610LAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 60V 9A/35A TO220-3F |
|
IPP60R125P6XKSA1IR (Infineon Technologies) |
MOSFET N-CH 600V 30A TO220-3 |