MOSFET N-CH 650V 14A TO247-3
BREADBRD PREPUNCHED INSULAT NPTH
Type | Description |
---|---|
Series: | Automotive, AEC-Q101, CoolMOS™ |
Package: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 650 V |
Current - Continuous Drain (Id) @ 25°C: | 14A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | - |
Rds On (Max) @ Id, Vgs: | 190mOhm @ 6.4A, 10V |
Vgs(th) (Max) @ Id: | 4.5V @ 320µA |
Gate Charge (Qg) (Max) @ Vgs: | 28 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 1291 pF @ 400 V |
FET Feature: | - |
Power Dissipation (Max): | 77W (Tc) |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | PG-TO247-3 |
Package / Case: | TO-247-3 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
PMN50EPEXNexperia |
MOSFET P-CH 30V 4.6A 6TSOP |
|
AUIRFB3806Rochester Electronics |
MOSFET N-CH 60V 43A TO220AB |
|
IXTX32P60PWickmann / Littelfuse |
MOSFET P-CH 600V 32A PLUS247-3 |
|
IPI80N04S3-06Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
FDS6575Sanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 20V 10A 8SOIC |
|
IRF6714MTRPBFRochester Electronics |
MOSFET N-CH 25V 29A/166A DIRECT |
|
MVGSF1N02LT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 20V 750MA SOT23-3 |
|
TK12A80W,S4XToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 800V 11.5A TO220SIS |
|
IRFW620BTMRochester Electronics |
N-CHANNEL POWER MOSFET |
|
SUD50N04-09H-E3Vishay / Siliconix |
MOSFET N-CH 40V 50A TO252 |
|
SQJQ466E-T1_GE3Vishay / Siliconix |
MOSFET N-CH 60V 200A PPAK 8 X 8 |
|
TSM70N600CP ROGTSC (Taiwan Semiconductor) |
MOSFET N-CHANNEL 700V 8A TO252 |
|
SUM45N25-58-E3Vishay / Siliconix |
MOSFET N-CH 250V 45A TO263 |