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IRLI640GPBF

IRLI640GPBF

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IRLI640GPBF

IRLI640GPBF

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Part No :

IRLI640GPBF

Manufacturer
Vishay / Siliconix
Description
MOSFET N-CH 200V 9.9A TO220-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
11219 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 23 - Nov 27 2024
PDF
IRLI640GPBF PDF
Type Description
Series:-
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):200 V
Current - Continuous Drain (Id) @ 25°C:9.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4V, 5V
Rds On (Max) @ Id, Vgs:180mOhm @ 5.9A, 5V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:66 nC @ 10 V
Vgs (Max):±10V
Input Capacitance (Ciss) (Max) @ Vds:1800 pF @ 25 V
FET Feature:-
Power Dissipation (Max):40W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220-3
Package / Case:TO-220-3 Full Pack, Isolated Tab
IRLI640GPBF is available at GangBo-ic.com, Please review product page below for detailed information, including IRLI640GPBF price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IRLI640GPBF to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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