







MEMS OSC XO 33.33333MHZ H/LVCMOS
MEMS OSC XO 60.0000MHZ CMOS SMD
GANFET N-CH 100V 6A DIE OUTLINE
TERM BLK 2POS SIDE ENTRY 5MM PCB
| Type | Description |
|---|---|
| Series: | eGaN® |
| Package: | Tape & Reel (TR)Cut Tape (CT) |
| Part Status: | Active |
| FET Type: | N-Channel |
| Technology: | GaNFET (Gallium Nitride) |
| Drain to Source Voltage (Vdss): | 100 V |
| Current - Continuous Drain (Id) @ 25°C: | 6A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On): | 5V |
| Rds On (Max) @ Id, Vgs: | 30mOhm @ 6A, 5V |
| Vgs(th) (Max) @ Id: | 2.5V @ 1.2mA |
| Gate Charge (Qg) (Max) @ Vgs: | 2.2 nC @ 5 V |
| Vgs (Max): | +6V, -4V |
| Input Capacitance (Ciss) (Max) @ Vds: | 220 pF @ 50 V |
| FET Feature: | - |
| Power Dissipation (Max): | - |
| Operating Temperature: | -40°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Supplier Device Package: | Die Outline (5-Solder Bar) |
| Package / Case: | Die |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
|
|
IXKH35N60C5Wickmann / Littelfuse |
MOSFET N-CH 600V 35A TO247AD |
|
|
IRLI640GPBFVishay / Siliconix |
MOSFET N-CH 200V 9.9A TO220-3 |
|
|
NVTFS4C25NWFTAGSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 10.1A/22.1A 8DFN |
|
|
NVMFS5C442NLT1GRochester Electronics |
MOSFET N-CH 40V 28A/130A 5DFN |
|
|
IRLSL3036PBFRochester Electronics |
MOSFET N-CH 60V 195A TO262 |
|
|
PMPB07R3ENXNexperia |
PMPB07R3EN/SOT1220-2/DFN2020M- |
|
|
STH270N4F3-2STMicroelectronics |
MOSFET N-CH 40V 180A H2PAK |
|
|
RQ6E060ATTCRROHM Semiconductor |
MOSFET P-CH 30V 6A TSMT6 |
|
|
DMN2046U-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 20V 3.4A SOT23 |
|
|
APT66F60B2Roving Networks / Microchip Technology |
MOSFET N-CH 600V 70A T-MAX |
|
|
AOTF66920LAlpha and Omega Semiconductor, Inc. |
MOSFET N-CH 100V 22.5/41A TO220F |
|
|
IPD220N06L3GBTMA1IR (Infineon Technologies) |
MOSFET N-CH 60V 30A TO252-3 |
|
|
DMN2600UFB-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 25V 1.3A 3DFN |