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IPB080N03LGATMA1

IPB080N03LGATMA1

PFET, 48A I(D), 30V, 0.0119OHM,

IPB080N03LGATMA1

IPB080N03LGATMA1

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Part No :

IPB080N03LGATMA1

Manufacturer
Rochester Electronics
Description
PFET, 48A I(D), 30V, 0.0119OHM,
Catalog
Transistors - FETs, MOSFETs - Single
Availability
16323 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 17 - Nov 21 2024
PDF
IPB080N03LGATMA1 PDF
Type Description
Series:OptiMOS™
Package:Bulk
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:50A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:8mOhm @ 30A, 10V
Vgs(th) (Max) @ Id:2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:18 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1.9 pF @ 15 V
FET Feature:-
Power Dissipation (Max):47W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D²PAK (TO-263AB)
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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