MOSFET N-CH 200V 100A TO264
Type | Description |
---|---|
Series: | * |
Package: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 200 V |
Current - Continuous Drain (Id) @ 25°C: | 100A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | - |
Rds On (Max) @ Id, Vgs: | 16mOhm @ 50A, 10V |
Vgs(th) (Max) @ Id: | 5V @ 2.5mA |
Gate Charge (Qg) (Max) @ Vgs: | 140 nC @ 10 V |
Vgs (Max): | - |
Input Capacitance (Ciss) (Max) @ Vds: | 7220 pF @ 25 V |
FET Feature: | - |
Power Dissipation (Max): | - |
Operating Temperature: | - |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-264 [L] |
Package / Case: | TO-264-3, TO-264AA |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
RQ3E160ADTBROHM Semiconductor |
MOSFET N-CH 30V 16A 8HSMT |
|
SPS03N60C3AKMA1Rochester Electronics |
MOSFET N-CH 650V 3.2A TO251-3-11 |
|
IPB024N10N5ATMA1IR (Infineon Technologies) |
MOSFET N-CH 100V 180A TO263-7 |
|
STI10NM60NSTMicroelectronics |
MOSFET N-CH 600V 10A I2PAK |
|
IPB080N03LGATMA1Rochester Electronics |
PFET, 48A I(D), 30V, 0.0119OHM, |
|
IRF2804SPBFRochester Electronics |
HEXFET POWER MOSFET |
|
IPP147N12N3GRochester Electronics |
MOSFET N-CH 120V 56A TO220-3 |
|
APT32M80JRoving Networks / Microchip Technology |
MOSFET N-CH 800V 33A ISOTOP |
|
VP0109N3-GRoving Networks / Microchip Technology |
MOSFET P-CH 90V 250MA TO92-3 |
|
SI7326DN-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 6.5A PPAK 1212-8 |
|
DMN2024U-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 20V 6.8A SOT23 T&R 3 |
|
AON6444Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 60V 14A/81A 8DFN |
|
BSD214SNH6327Rochester Electronics |
BSD314 - 250V-600V SMALL SIGNAL/ |