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SIA416DJ-T1-GE3

SIA416DJ-T1-GE3

MOSFET N-CH 100V 11.3A PPAK

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SIA416DJ-T1-GE3

SIA416DJ-T1-GE3

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Part No :

SIA416DJ-T1-GE3

Manufacturer
Vishay / Siliconix
Description
MOSFET N-CH 100V 11.3A PPAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
12500 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 24 - Nov 28 2024
PDF
SIA416DJ-T1-GE3 PDF
Type Description
Series:TrenchFET®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:11.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:83mOhm @ 3.2A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:10 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:295 pF @ 50 V
FET Feature:-
Power Dissipation (Max):3.5W (Ta), 19W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PowerPAK® SC-70-6 Single
Package / Case:PowerPAK® SC-70-6
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