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FQPF13N06L

FQPF13N06L

MOSFET N-CH 60V 10A TO220F

Q-2W01T0003003I

Q-2W01T0003003I

SMA-SJB/N-SJB G174 3I

FQPF13N06L

FQPF13N06L

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Part No :

FQPF13N06L

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
MOSFET N-CH 60V 10A TO220F
Catalog
Transistors - FETs, MOSFETs - Single
Availability
16057000 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 15 - Nov 19 2024
PDF
FQPF13N06L PDF
Type Description
Series:QFET®
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:10A (Tc)
Drive Voltage (Max Rds On, Min Rds On):5V, 10V
Rds On (Max) @ Id, Vgs:110mOhm @ 5A, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:6.4 nC @ 5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:350 pF @ 25 V
FET Feature:-
Power Dissipation (Max):24W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220F
Package / Case:TO-220-3 Full Pack
FQPF13N06L is available at GangBo-ic.com, Please review product page below for detailed information, including FQPF13N06L price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for FQPF13N06L to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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