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NVTFS5824NLTAG

NVTFS5824NLTAG

POWER FIELD-EFFECT TRANSISTOR

NVTFS5824NLTAG

NVTFS5824NLTAG

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Part No :

NVTFS5824NLTAG

Manufacturer
Rochester Electronics
Description
POWER FIELD-EFFECT TRANSISTOR
Catalog
Transistors - FETs, MOSFETs - Single
Availability
11500 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 24 - Nov 28 2024
PDF
NVTFS5824NLTAG PDF
Type Description
Series:-
Package:Bulk
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:37A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:20.5mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:16 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:850 pF @ 25 V
FET Feature:-
Power Dissipation (Max):3.2W (Ta), 57W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-WDFN (3.3x3.3)
Package / Case:8-PowerWDFN
NVTFS5824NLTAG is available at GangBo-ic.com, Please review product page below for detailed information, including NVTFS5824NLTAG price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for NVTFS5824NLTAG to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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