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RM1A5N30S3AE

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RM1A5N30S3AE

RM1A5N30S3AE

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Part No :

RM1A5N30S3AE

Manufacturer
Rectron USA
Description
MOSFET N-CH 30V 1.5A/1.4A SOT323
Catalog
Transistors - FETs, MOSFETs - Single
Availability
237723 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 23 - Nov 27 2024
Type Description
Series:-
Package:Tape & Reel (TR)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:1.5A (Ta), 1.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On):2.5V, 4.5V
Rds On (Max) @ Id, Vgs:144mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id:1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:-
Vgs (Max):±10V
Input Capacitance (Ciss) (Max) @ Vds:105 pF @ 15 V
FET Feature:-
Power Dissipation (Max):400mW (Ta), 500mW (Tc)
Operating Temperature:-50°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-323
Package / Case:SC-70, SOT-323
RM1A5N30S3AE is available at GangBo-ic.com, Please review product page below for detailed information, including RM1A5N30S3AE price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for RM1A5N30S3AE to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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