MOSFET P-CH 30V 11A PWRDI3333
Type | Description |
---|---|
Series: | - |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Active |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 30 V |
Current - Continuous Drain (Id) @ 25°C: | 11A (Ta), 35A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 12mOhm @ 11.5A, 10V |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 51 nC @ 10 V |
Vgs (Max): | ±25V |
Input Capacitance (Ciss) (Max) @ Vds: | 2147 pF @ 15 V |
FET Feature: | - |
Power Dissipation (Max): | 1W (Ta) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | PowerDI3333-8 (Type UX) |
Package / Case: | 8-PowerVDFN |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
APT10086BVRGRoving Networks / Microchip Technology |
MOSFET N-CH 1000V 13A TO247 |
|
VN0109N3-GRoving Networks / Microchip Technology |
MOSFET N-CH 90V 350MA TO92-3 |
|
APT6013LLLGRoving Networks / Microchip Technology |
MOSFET N-CH 600V 43A TO264 |
|
NVH4L080N120SC1Sanyo Semiconductor/ON Semiconductor |
TRANS SJT N-CH 1200V 29A TO247-4 |
|
BSZ0910LSATMA1IR (Infineon Technologies) |
MOSFET N-CH 30V 18A/40A TSDSON |
|
SIHP22N60E-GE3Vishay / Siliconix |
MOSFET N-CH 600V 21A TO220AB |
|
FQD2N60CTMSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 600V 1.9A DPAK |
|
PSMN1R6-30MLHXNexperia |
MOSFET N-CH 30V 160A LFPAK33 |
|
BUK7Y2R0-40HXNexperia |
MOSFET N-CH 40V 120A LFPAK56 |
|
RJ1G12BGNTLLROHM Semiconductor |
MOSFET N-CH 40V 120A LPTL |
|
PMV28UN,215Rochester Electronics |
SMALL SIGNAL FIELD-EFFECT TRANSI |
|
NTD4910NT4GRochester Electronics |
MOSFET N-CH 30V 8.2A/37A DPAK |
|
GKI10526Sanken Electric Co., Ltd. |
MOSFET N-CH 100V 4A 8DFN |