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BSC0802LSATMA1

BSC0802LSATMA1

MOSFET N-CH 100V 20A/100A TDSON

BSC0802LSATMA1

BSC0802LSATMA1

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Part No :

BSC0802LSATMA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 100V 20A/100A TDSON
Catalog
Transistors - FETs, MOSFETs - Single
Availability
15077 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 24 - Nov 28 2024
Type Description
Series:OptiMOS™ 5
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:20A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:3.4mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:2.3V @ 115µA
Gate Charge (Qg) (Max) @ Vgs:46 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:6500 pF @ 50 V
FET Feature:-
Power Dissipation (Max):156W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TDSON-8-7
Package / Case:8-PowerTDFN
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