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FQD20N06LETM

FQD20N06LETM

MOSFET N-CH 60V 17.2A DPAK

1607349

1607349

CONN PLG HSG FMALE 17POS INLINE

2820326-2

2820326-2

C/A, INTERNAL HD MINI SAS, 85 OH

FQD20N06LETM

FQD20N06LETM

Image is for reference, please contact us to get the real picture

Part No :

FQD20N06LETM

Manufacturer
Rochester Electronics
Description
MOSFET N-CH 60V 17.2A DPAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
64822 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 26 - Nov 30 2024
PDF
FQD20N06LETM PDF
Type Description
Series:QFET®
Package:Bulk
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:17.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On):5V, 10V
Rds On (Max) @ Id, Vgs:60mOhm @ 8.6A, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:13 nC @ 5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:665 pF @ 25 V
FET Feature:-
Power Dissipation (Max):2.5W (Ta), 38W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D-Pak
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
FQD20N06LETM is available at GangBo-ic.com, Please review product page below for detailed information, including FQD20N06LETM price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for FQD20N06LETM to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

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