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IPB160N04S3H2ATMA1

IPB160N04S3H2ATMA1

OPTLMOS N-CHANNEL POWER MOSFET

IPB160N04S3H2ATMA1

IPB160N04S3H2ATMA1

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Part No :

IPB160N04S3H2ATMA1

Manufacturer
Rochester Electronics
Description
OPTLMOS N-CHANNEL POWER MOSFET
Catalog
Transistors - FETs, MOSFETs - Single
Availability
11000 pieces
Shipped from
HK warehouse
Expected Shipping Date
Dec 28 - Jan 01 2024
PDF
IPB160N04S3H2ATMA1 PDF
Type Description
Series:OptiMOS™
Package:Bulk
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:160A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:2.1mOhm @ 80A, 10V
Vgs(th) (Max) @ Id:4V @ 150µA
Gate Charge (Qg) (Max) @ Vgs:145 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:9.6 pF @ 25 V
FET Feature:-
Power Dissipation (Max):214W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO263-7-3
Package / Case:TO-263-7, D²Pak (6 Leads + Tab)
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