MOSFET N-CH 100V 97A TO220AB
SMA-RJB/SMB-SJ G316 1.5M
Type | Description |
---|---|
Series: | HEXFET® |
Package: | Tube |
Part Status: | Not For New Designs |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 100 V |
Current - Continuous Drain (Id) @ 25°C: | 97A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 9mOhm @ 58A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 150µA |
Gate Charge (Qg) (Max) @ Vgs: | 120 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 4820 pF @ 50 V |
FET Feature: | - |
Power Dissipation (Max): | 230W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-220AB |
Package / Case: | TO-220-3 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
CMUDM7001 TR PBFREECentral Semiconductor |
MOSFET N-CH 20V 100MA SOT523 |
|
RCJ510N25TLROHM Semiconductor |
MOSFET N-CH 250V 51A LPTS |
|
FDP2670Rochester Electronics |
MOSFET N-CH 200V 19A TO220-3 |
|
BSC340N08NS3GATMA1IR (Infineon Technologies) |
MOSFET N-CH 80V 7A/23A TDSON-8-5 |
|
SFM9110TFRochester Electronics |
MOSFET P-CH 100V 1A SOT223-4 |
|
NTMFS6B05NT3GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 16A/104A 5DFN |
|
NTD60N02R-35GRochester Electronics |
MOSFET N-CH 25V 8.5A/32A IPAK |
|
RQ7E110AJTCRROHM Semiconductor |
MOSFET N-CH 30V 11A TSMT8 |
|
IRFH7004TRPBFIR (Infineon Technologies) |
MOSFET N-CH 40V 100A 8PQFN |
|
RM30N100LDRectron USA |
MOSFET N-CH 100V 30A TO252-2 |
|
NTMFS5C612NLT3GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 36A/235A 5DFN |
|
BSL302SNL6327Rochester Electronics |
SMALL SIGNAL N-CHANNEL MOSFET |
|
VP0550N3-GRoving Networks / Microchip Technology |
MOSFET P-CH 500V 54MA TO92-3 |