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IPZ40N04S55R4ATMA1

IPZ40N04S55R4ATMA1

MOSFET N-CH 40V 40A 8TSDSON

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IPZ40N04S55R4ATMA1

IPZ40N04S55R4ATMA1

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Part No :

IPZ40N04S55R4ATMA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 40V 40A 8TSDSON
Catalog
Transistors - FETs, MOSFETs - Single
Availability
14851 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 28 - Dec 02 2024
PDF
IPZ40N04S55R4ATMA1 PDF
Type Description
Series:Automotive, AEC-Q101, OptiMOS™
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:40A (Tc)
Drive Voltage (Max Rds On, Min Rds On):7V, 10V
Rds On (Max) @ Id, Vgs:5.4mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:3.4V @ 17µA
Gate Charge (Qg) (Max) @ Vgs:23 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1300 pF @ 25 V
FET Feature:-
Power Dissipation (Max):48W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TSDSON-8
Package / Case:8-PowerVDFN
IPZ40N04S55R4ATMA1 is available at GangBo-ic.com, Please review product page below for detailed information, including IPZ40N04S55R4ATMA1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IPZ40N04S55R4ATMA1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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