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IPD50R3K0CEBTMA1

IPD50R3K0CEBTMA1

OPTLMOS N-CHANNEL POWER MOSFET

IPD50R3K0CEBTMA1

IPD50R3K0CEBTMA1

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Part No :

IPD50R3K0CEBTMA1

Manufacturer
Rochester Electronics
Description
OPTLMOS N-CHANNEL POWER MOSFET
Catalog
Transistors - FETs, MOSFETs - Single
Availability
15100 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 23 - Nov 27 2024
PDF
IPD50R3K0CEBTMA1 PDF
Type Description
Series:CoolMOS™ CE
Package:Bulk
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):500 V
Current - Continuous Drain (Id) @ 25°C:1.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On):13V
Rds On (Max) @ Id, Vgs:3Ohm @ 400mA, 13V
Vgs(th) (Max) @ Id:3.5V @ 30µA
Gate Charge (Qg) (Max) @ Vgs:4.3 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:84 pF @ 100 V
FET Feature:-
Power Dissipation (Max):18W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO252-3
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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