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SISS26DN-T1-GE3

SISS26DN-T1-GE3

MOSFET N-CH 60V 60A PPAK1212-8S

08-ANT-0952-WH-E

08-ANT-0952-WH-E

MICRO WI-FI OMNI ANTENNA TNCM

SISS26DN-T1-GE3

SISS26DN-T1-GE3

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Part No :

SISS26DN-T1-GE3

Manufacturer
Vishay / Siliconix
Description
MOSFET N-CH 60V 60A PPAK1212-8S
Catalog
Transistors - FETs, MOSFETs - Single
Availability
24181 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 23 - Nov 27 2024
PDF
SISS26DN-T1-GE3 PDF
Type Description
Series:TrenchFET® Gen IV
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:60A (Tc)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:4.5mOhm @ 15A, 10V
Vgs(th) (Max) @ Id:3.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:37 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1710 pF @ 30 V
FET Feature:-
Power Dissipation (Max):57W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PowerPAK® 1212-8S (3.3x3.3)
Package / Case:PowerPAK® 1212-8S
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