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IXTY1R4N120PHV

IXTY1R4N120PHV

MOSFET N-CH 1200V 1.4A TO252

IXTY1R4N120PHV

IXTY1R4N120PHV

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Part No :

IXTY1R4N120PHV

Manufacturer
Wickmann / Littelfuse
Description
MOSFET N-CH 1200V 1.4A TO252
Catalog
Transistors - FETs, MOSFETs - Single
Availability
736173 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 23 - Nov 27 2024
PDF
IXTY1R4N120PHV PDF
Type Description
Series:Polar™
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):1200 V
Current - Continuous Drain (Id) @ 25°C:1.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:13Ohm @ 700mA, 10V
Vgs(th) (Max) @ Id:4.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:24.8 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:666 pF @ 25 V
FET Feature:-
Power Dissipation (Max):86W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-252
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
IXTY1R4N120PHV is available at GangBo-ic.com, Please review product page below for detailed information, including IXTY1R4N120PHV price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IXTY1R4N120PHV to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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