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FDAF69N25

FDAF69N25

MOSFET N-CH 250V 34A TO3PF

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FDAF69N25

FDAF69N25

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Part No :

FDAF69N25

Manufacturer
Rochester Electronics
Description
MOSFET N-CH 250V 34A TO3PF
Catalog
Transistors - FETs, MOSFETs - Single
Availability
12036 pieces
Shipped from
HK warehouse
Expected Shipping Date
Sep 25 - Sep 29 2024
PDF
FDAF69N25 PDF
Type Description
Series:UniFET™
Package:Tube
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):250 V
Current - Continuous Drain (Id) @ 25°C:34A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:41mOhm @ 17A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:100 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:4.64 pF @ 25 V
FET Feature:-
Power Dissipation (Max):115W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-3PF
Package / Case:TO-3P-3 Full Pack
FDAF69N25 is available at GangBo-ic.com, Please review product page below for detailed information, including FDAF69N25 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for FDAF69N25 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

Office Hours : Mon-Fri, 9:00-18:30(GMT+8)

[email protected]

Phone: 00852-52612101

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