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IPB80N06S2L06ATMA2

IPB80N06S2L06ATMA2

MOSFET N-CH 55V 80A TO263-3

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IPB80N06S2L06ATMA2

IPB80N06S2L06ATMA2

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Part No :

IPB80N06S2L06ATMA2

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 55V 80A TO263-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
935793 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 24 - Nov 28 2024
PDF
IPB80N06S2L06ATMA2 PDF
Type Description
Series:OptiMOS™
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):55 V
Current - Continuous Drain (Id) @ 25°C:80A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:6mOhm @ 69A, 10V
Vgs(th) (Max) @ Id:2V @ 180µA
Gate Charge (Qg) (Max) @ Vgs:150 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:3800 pF @ 25 V
FET Feature:-
Power Dissipation (Max):250W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO263-3-2
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IPB80N06S2L06ATMA2 is available at GangBo-ic.com, Please review product page below for detailed information, including IPB80N06S2L06ATMA2 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IPB80N06S2L06ATMA2 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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