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STB36NM60ND

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Part No :: STB36NM60ND

Manufacturer: STMicroelectronics

Description: MOSFET N-CH 600V 29A D2PAK

Catalog: Transistors - FETs, MOSFETs - Single

Availability: 10937 pieces

Shipped from: HK warehouse

Expected Shipping Date: Nov 27 - Dec 01 2024

PDF: STB36NM60ND PDF

Type	Description
Series:	Automotive, AEC-Q101, FDmesh™ II
Package:	Tape & Reel (TR)Cut Tape (CT)
Part Status:	Active
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	600 V
Current - Continuous Drain (Id) @ 25°C:	29A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	10V
Rds On (Max) @ Id, Vgs:	110mOhm @ 14.5A, 10V
Vgs(th) (Max) @ Id:	5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	80.4 nC @ 10 V
Vgs (Max):	±25V
Input Capacitance (Ciss) (Max) @ Vds:	2785 pF @ 50 V
FET Feature:	-
Power Dissipation (Max):	190W (Tc)
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	D2PAK
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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