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FQI12N60CTU

FQI12N60CTU

MOSFET N-CH 600V 12A I2PAK

FQI12N60CTU

FQI12N60CTU

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Part No :

FQI12N60CTU

Manufacturer
Rochester Electronics
Description
MOSFET N-CH 600V 12A I2PAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
12882 pieces
Shipped from
HK warehouse
Expected Shipping Date
Dec 28 - Jan 01 2024
PDF
FQI12N60CTU PDF
Type Description
Series:QFET®
Package:Tube
Part Status:Obsolete
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:12A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:650mOhm @ 6A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:63 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:2.29 pF @ 25 V
FET Feature:-
Power Dissipation (Max):3.13W (Ta), 225W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:I2PAK (TO-262)
Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
FQI12N60CTU is available at GangBo-ic.com, Please review product page below for detailed information, including FQI12N60CTU price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for FQI12N60CTU to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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