MOSFET N-CH 650V 58A ISOWATT
Type | Description |
---|---|
Series: | MDmesh™ V |
Package: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 650 V |
Current - Continuous Drain (Id) @ 25°C: | 58A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 45mOhm @ 29A, 10V |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 143 nC @ 10 V |
Vgs (Max): | ±25V |
Input Capacitance (Ciss) (Max) @ Vds: | 6420 pF @ 100 V |
FET Feature: | - |
Power Dissipation (Max): | 79W (Tc) |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | ISOWATT-218FX |
Package / Case: | ISOWATT218FX |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
SIA813DJ-T1-GE3Vishay / Siliconix |
MOSFET P-CH 20V 4.5A PPAK SC70-6 |
|
NTB12N50Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
FQI12N60CTURochester Electronics |
MOSFET N-CH 600V 12A I2PAK |
|
IPZA60R060P7XKSA1IR (Infineon Technologies) |
MOSFET N-CH 600V 48A TO247-4 |
|
SFS9634Rochester Electronics |
P-CHANNEL POWER MOSFET |
|
PMZ290UNE2YLNexperia |
MOSFET N-CH 20V 1.2A DFN1006-3 |
|
FQP6N50Rochester Electronics |
MOSFET N-CH 500V 5.5A TO220-3 |
|
RQ5P010SNTLROHM Semiconductor |
MOSFET N-CH 100V 1A TSMT3 |
|
FDN302PSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 20V 2.4A SUPERSOT3 |
|
FQI3N25TURochester Electronics |
MOSFET N-CH 250V 2.8A I2PAK |
|
FDD7030BLRochester Electronics |
MOSFET N-CH 30V 14A/56A DPAK |
|
SI3443BDV-T1-BE3Vishay / Siliconix |
MOSFET P-CH 20V 3.6A 6TSOP |
|
FDD850N10LDRochester Electronics |
MOSFET N-CH 100V 15.3A TO252-4 |