MOSFET N-CH 600V 15A TO262F
Type | Description |
---|---|
Series: | aMOS™ |
Package: | Tube |
Part Status: | Not For New Designs |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 600 V |
Current - Continuous Drain (Id) @ 25°C: | 15A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 290mOhm @ 7.5A, 10V |
Vgs(th) (Max) @ Id: | 3.8V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 15.6 nC @ 10 V |
Vgs (Max): | ±30V |
Input Capacitance (Ciss) (Max) @ Vds: | 717 pF @ 100 V |
FET Feature: | - |
Power Dissipation (Max): | 27.8W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | - |
Package / Case: | TO-262-3 Full Pack, I²Pak |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
SQD50P04-13L_GE3Vishay / Siliconix |
MOSFET P-CH 40V 50A TO252 |
|
BFL4037Rochester Electronics |
MOSFET N-CH 500V 11A TO220FI |
|
SUM52N20-39P-E3Vishay / Siliconix |
MOSFET N-CH 200V 52A TO263 |
|
FDB3632-F085Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 12A TO263AB |
|
FDB7042LRochester Electronics |
N-CHANNEL POWER MOSFET |
|
2SK1589-T1B-ATRochester Electronics |
SMALL SIGNAL N-CHANNEL MOSFET |
|
IRFS4410ZTRLPBFIR (Infineon Technologies) |
MOSFET N-CH 100V 97A D2PAK |
|
PSMN6R0-30YLDXNexperia |
MOSFET N-CH 30V 66A LFPAK56 |
|
IRFZ34NSTRRPBFRochester Electronics |
MOSFET N-CH 55V 29A D2PAK |
|
SIR422DP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 40V 40A PPAK SO-8 |
|
SIR638DP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 40V 100A PPAK SO-8 |
|
BSC082N10LSGATMA1IR (Infineon Technologies) |
MOSFET N-CH 100V 13.8A 8TDSON |
|
DMN6017SK3-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CHANNEL 60V 43A TO252 |