MOSFET N-CH 60V 600MA TO92-3
Type | Description |
---|---|
Series: | - |
Package: | Bulk |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 60 V |
Current - Continuous Drain (Id) @ 25°C: | 600mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 5V, 10V |
Rds On (Max) @ Id, Vgs: | 1Ohm @ 1.5A, 10V |
Vgs(th) (Max) @ Id: | 3V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | - |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 100 pF @ 25 V |
FET Feature: | - |
Power Dissipation (Max): | 700mW (Ta) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-92 |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
DMN2029UVT-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 6.8A TSOT26 |
|
AOWF15S60Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 600V 15A TO262F |
|
SQD50P04-13L_GE3Vishay / Siliconix |
MOSFET P-CH 40V 50A TO252 |
|
BFL4037Rochester Electronics |
MOSFET N-CH 500V 11A TO220FI |
|
SUM52N20-39P-E3Vishay / Siliconix |
MOSFET N-CH 200V 52A TO263 |
|
FDB3632-F085Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 12A TO263AB |
|
FDB7042LRochester Electronics |
N-CHANNEL POWER MOSFET |
|
2SK1589-T1B-ATRochester Electronics |
SMALL SIGNAL N-CHANNEL MOSFET |
|
IRFS4410ZTRLPBFIR (Infineon Technologies) |
MOSFET N-CH 100V 97A D2PAK |
|
PSMN6R0-30YLDXNexperia |
MOSFET N-CH 30V 66A LFPAK56 |
|
IRFZ34NSTRRPBFRochester Electronics |
MOSFET N-CH 55V 29A D2PAK |
|
SIR422DP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 40V 40A PPAK SO-8 |
|
SIR638DP-T1-GE3Vishay / Siliconix |
MOSFET N-CH 40V 100A PPAK SO-8 |