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SIHA11N80E-GE3

SIHA11N80E-GE3

MOSFET N-CH 800V 12A TO220

SIHA11N80E-GE3

SIHA11N80E-GE3

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Part No :

SIHA11N80E-GE3

Manufacturer
Vishay / Siliconix
Description
MOSFET N-CH 800V 12A TO220
Catalog
Transistors - FETs, MOSFETs - Single
Availability
10884 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 24 - Nov 28 2024
PDF
SIHA11N80E-GE3 PDF
Type Description
Series:E
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):800 V
Current - Continuous Drain (Id) @ 25°C:12A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:440mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:88 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:1670 pF @ 100 V
FET Feature:-
Power Dissipation (Max):34W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220 Full Pack
Package / Case:TO-220-3 Full Pack
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