MOSFET N-CH 40V 82A TO220SIS
Type | Description |
---|---|
Series: | U-MOSIX-H |
Package: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 40 V |
Current - Continuous Drain (Id) @ 25°C: | 82A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 3.8mOhm @ 30A, 4.5V |
Vgs(th) (Max) @ Id: | 2.4V @ 500µA |
Gate Charge (Qg) (Max) @ Vgs: | 63.4 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 4670 pF @ 20 V |
FET Feature: | - |
Power Dissipation (Max): | 36W (Tc) |
Operating Temperature: | 175°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-220SIS |
Package / Case: | TO-220-3 Full Pack |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
AOTS21311CAlpha and Omega Semiconductor, Inc. |
MOSFET P-CH 30V 5.9A 6TSOP |
|
STF12N60M2STMicroelectronics |
MOSFET N-CH 600V 9A TO220FP |
|
IAUC60N04S6N044ATMA1IR (Infineon Technologies) |
IAUC60N04S6N044ATMA1 |
|
BSS606NH6327XTSA1IR (Infineon Technologies) |
MOSFET N-CH 60V 3.2A SOT89 |
|
PMN48XP,125Rochester Electronics |
MOSFET P-CH 20V 4.1A 6TSOP |
|
SIHA11N80E-GE3Vishay / Siliconix |
MOSFET N-CH 800V 12A TO220 |
|
NTJS3157NT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 20V 3.2A SC88/SC70-6 |
|
PMN120ENEXNexperia |
MOSFET N-CH 60V 3.1A 6TSOP |
|
IPB083N15N5LFATMA1IR (Infineon Technologies) |
MOSFET N-CH 150V 105A D2PAK |
|
APT60M75JFLLRoving Networks / Microchip Technology |
MOSFET N-CH 600V 58A ISOTOP |
|
IXTQ460P2Wickmann / Littelfuse |
MOSFET N-CH 500V 24A TO3P |
|
IXTQ96N15PWickmann / Littelfuse |
MOSFET N-CH 150V 96A TO3P |
|
STF35N60DM2STMicroelectronics |
MOSFET N-CH 600V 28A TO220FP |