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IPB016N06L3GATMA1

IPB016N06L3GATMA1

MOSFET N-CH 60V 180A TO263-7

71V2556S133BG

71V2556S133BG

IC SRAM 4.5MBIT PARALLEL 119PBGA

IPB016N06L3GATMA1

IPB016N06L3GATMA1

Image is for reference, please contact us to get the real picture

Part No :

IPB016N06L3GATMA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 60V 180A TO263-7
Catalog
Transistors - FETs, MOSFETs - Single
Availability
075007 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 23 - Nov 27 2024
PDF
IPB016N06L3GATMA1 PDF
Type Description
Series:OptiMOS™
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:180A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:1.6mOhm @ 100A, 10V
Vgs(th) (Max) @ Id:2.2V @ 196µA
Gate Charge (Qg) (Max) @ Vgs:166 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:28000 pF @ 30 V
FET Feature:-
Power Dissipation (Max):250W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO263-7
Package / Case:TO-263-7, D²Pak (6 Leads + Tab)
IPB016N06L3GATMA1 is available at GangBo-ic.com, Please review product page below for detailed information, including IPB016N06L3GATMA1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IPB016N06L3GATMA1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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