MOSFET N-CH 600V 28A TO262F
Type | Description |
---|---|
Series: | aMOS5™ |
Package: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 600 V |
Current - Continuous Drain (Id) @ 25°C: | 28A (Tj) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 125mOhm @ 14A, 10V |
Vgs(th) (Max) @ Id: | 4.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 39 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 2993 pF @ 100 V |
FET Feature: | - |
Power Dissipation (Max): | 32.5W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-262F |
Package / Case: | TO-262-3 Full Pack, I²Pak |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
TK40P04M1(T6RSS-Q)Toshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 40V 40A DP |
|
STD18NF03LSTMicroelectronics |
MOSFET N-CH 30V 17A DPAK |
|
NP50P04SDG-E1-AYRenesas Electronics America |
MOSFET P-CH 40V 50A TO252 |
|
BSS87H6327XTSA1IR (Infineon Technologies) |
MOSFET N-CH 240V 260MA SOT89-4 |
|
IMW120R030M1HXKSA1IR (Infineon Technologies) |
SICFET N-CH 1.2KV 56A TO247-3 |
|
FDBL86363-F085Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 80V 240A 8HPSOF |
|
R5013ANJTLROHM Semiconductor |
MOSFET N-CH 500V 13A LPTS |
|
STD2NC45-1STMicroelectronics |
MOSFET N-CH 450V 1.5A IPAK |
|
HUFA75545P3Rochester Electronics |
MOSFET N-CH 80V 75A TO220-3 |
|
STP10NK70ZSTMicroelectronics |
MOSFET N-CH 700V 8.6A TO220AB |
|
FDU6682Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
IPSA70R900P7SAKMA1IR (Infineon Technologies) |
MOSFET N-CH 700V 6A TO251-3 |
|
DMP4015SSSQ-13Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 40V 9.1A 8SO |