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IPD068N10N3GATMA1

IPD068N10N3GATMA1

Image is for reference, please contact us to get the real picture

Part No :

IPD068N10N3GATMA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 100V 90A TO252-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
11069 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 27 - Dec 01 2024
PDF
IPD068N10N3GATMA1 PDF
Type Description
Series:OptiMOS™
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:90A (Tc)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:6.8mOhm @ 90A, 10V
Vgs(th) (Max) @ Id:3.5V @ 90µA
Gate Charge (Qg) (Max) @ Vgs:68 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:4910 pF @ 50 V
FET Feature:-
Power Dissipation (Max):150W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO252-3
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
IPD068N10N3GATMA1 is available at GangBo-ic.com, Please review product page below for detailed information, including IPD068N10N3GATMA1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IPD068N10N3GATMA1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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