MOSFET N-CH 30V 91A DPAK
Type | Description |
---|---|
Series: | HEXFET® |
Package: | Bulk |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 30 V |
Current - Continuous Drain (Id) @ 25°C: | 91A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | - |
Rds On (Max) @ Id, Vgs: | 9mOhm @ 15A, 10V |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 27 nC @ 5 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 2672 pF @ 16 V |
FET Feature: | - |
Power Dissipation (Max): | 115W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | D-PAK (TO-252AA) |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
IPZ65R019C7XKSA1IR (Infineon Technologies) |
MOSFET N-CH 650V 75A TO247-4 |
|
IPD068N10N3GATMA1IR (Infineon Technologies) |
MOSFET N-CH 100V 90A TO252-3 |
|
FQP30N06Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 30A TO220-3 |
|
C3M0065100JWolfspeed - a Cree company |
SICFET N-CH 1000V 35A D2PAK-7 |
|
IPB60R520CPRochester Electronics |
N-CHANNEL POWER MOSFET |
|
BUK762R0-40C,118Rochester Electronics |
PFET, 276A I(D), 40V, 0.00375OHM |
|
FDS7064NRochester Electronics |
MOSFET N-CH 30V 16A 8SO |
|
IPB47N10SL-26Rochester Electronics |
IPB47N10 - 75V-100V N-CHANNEL AU |
|
STL13N65M2STMicroelectronics |
MOSFET N-CH 650V 6.5A POWERFLAT |
|
STF140N6F7STMicroelectronics |
MOSFET N-CH 60V 70A TO220FP |
|
DMTH6004SCTZetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V 100A TO220-3 |
|
AOTF12N30Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 300V 11.5A TO220-3F |
|
IPB80N06S2L11ATMA2Rochester Electronics |
MOSFET N-CH 55V 80A TO263-3-2 |