MOSFET N-CH 650V 65A TO247
Type | Description |
---|---|
Series: | FRFET®, SuperFET® III |
Package: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 650 V |
Current - Continuous Drain (Id) @ 25°C: | 65A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 40mOhm @ 32.5A, 10V |
Vgs(th) (Max) @ Id: | 5V @ 2.1mA |
Gate Charge (Qg) (Max) @ Vgs: | 159 nC @ 10 V |
Vgs (Max): | ±30V |
Input Capacitance (Ciss) (Max) @ Vds: | 5945 pF @ 400 V |
FET Feature: | - |
Power Dissipation (Max): | 446W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-247 |
Package / Case: | TO-247-3 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
RM110N85T2Rectron USA |
MOSFET N-CH 85V 110A TO220-3 |
|
IXFR48N60Q3Wickmann / Littelfuse |
MOSFET N-CH 600V 32A ISOPLUS247 |
|
DMN26D0UT-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 20V 230MA SOT523 |
|
SPU21N05LRochester Electronics |
N-CHANNEL POWER MOSFET |
|
IXTP180N10TWickmann / Littelfuse |
MOSFET N-CH 100V 180A TO220AB |
|
VN2410L-GRoving Networks / Microchip Technology |
MOSFET N-CH 240V 190MA TO92-3 |
|
IRFS3006PBFRochester Electronics |
MOSFET N-CH 60V 195A D2PAK |
|
IRF7493TRPBFIR (Infineon Technologies) |
MOSFET N-CH 80V 9.3A 8SO |
|
FQI8N60CTURochester Electronics |
MOSFET N-CH 600V 7.5A I2PAK |
|
FDS6679AZSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 30V 13A 8SOIC |
|
FDS6689SRochester Electronics |
MOSFET N-CH 30V 16A 8SOIC |
|
SI3473CDV-T1-E3Vishay / Siliconix |
MOSFET P-CH 12V 8A 6TSOP |
|
TPC6111(TE85L,F,M)Toshiba Electronic Devices and Storage Corporation |
MOSFET P-CH 20V 5.5A VS-6 |