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FQB50N06LTM

FQB50N06LTM

MOSFET N-CH 60V 52.4A D2PAK

ERN.1S.250.CLL

ERN.1S.250.CLL

CONN PNL MNT RCPT COAX SKT SLDER

FQB50N06LTM

FQB50N06LTM

Image is for reference, please contact us to get the real picture

Part No :

FQB50N06LTM

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
MOSFET N-CH 60V 52.4A D2PAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
10193 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 13 - Nov 17 2024
PDF
FQB50N06LTM PDF
Type Description
Series:QFET®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:52.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On):5V, 10V
Rds On (Max) @ Id, Vgs:21mOhm @ 26.2A, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:32 nC @ 5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1630 pF @ 25 V
FET Feature:-
Power Dissipation (Max):3.75W (Ta), 121W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D²PAK (TO-263AB)
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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