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BSZ088N03MSGATMA1

BSZ088N03MSGATMA1

MOSFET N-CH 30V 11A/40A 8TSDSON

BSZ088N03MSGATMA1

BSZ088N03MSGATMA1

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Part No :

BSZ088N03MSGATMA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 30V 11A/40A 8TSDSON
Catalog
Transistors - FETs, MOSFETs - Single
Availability
14328 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 23 - Nov 27 2024
PDF
BSZ088N03MSGATMA1 PDF
Type Description
Series:OptiMOS™
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:11A (Ta), 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:8mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:27 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2100 pF @ 15 V
FET Feature:-
Power Dissipation (Max):2.1W (Ta), 35W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TSDSON-8
Package / Case:8-PowerTDFN
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