MOSFET N-CH 100V 36A TO220AB
Type | Description |
---|---|
Series: | HEXFET® |
Package: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 100 V |
Current - Continuous Drain (Id) @ 25°C: | 36A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 26.5mOhm @ 22A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 63 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 1770 pF @ 25 V |
FET Feature: | - |
Power Dissipation (Max): | 92W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-220AB |
Package / Case: | TO-220-3 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
3LP03M-TL-ERochester Electronics |
P-CHANNEL SILICON MOSFET |
|
PHP20NQ20T,127Nexperia |
MOSFET N-CH 200V 20A TO220AB |
|
TK10A60W,S4XToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 600V 9.7A TO220 |
|
AUIRLR3114ZTRLRochester Electronics |
AUTOMOTIVE POWER MOSFET |
|
RCD041N25TLROHM Semiconductor |
MOSFET N-CH 250V 4A CPT3 |
|
DMP26M7UFG-7Zetex Semiconductors (Diodes Inc.) |
MOSFET P-CH 20V 18A PWRDI3333 |
|
SIHP17N80E-BE3Vishay / Siliconix |
MOSFET N-CH 800V 15A TO220AB |
|
STD5NK40Z-1STMicroelectronics |
MOSFET N-CH 400V 3A IPAK |
|
SQJ403BEEP-T1_GE3Vishay / Siliconix |
MOSFET P-CH 30V 30A PPAK SO-8 |
|
BUK7E8R3-40E,127Nexperia |
MOSFET N-CH 40V 75A I2PAK |
|
IPI65R280C6XKSA1Rochester Electronics |
MOSFET N-CH 650V 13.8A TO262-3 |
|
SSU1N60BTURochester Electronics |
N-CHANNEL POWER MOSFET |
|
IPD70R600CEAUMA1IR (Infineon Technologies) |
MOSFET N-CH 700V 10.5A TO252-3 |