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NTHD2110TT1G

NTHD2110TT1G

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Part No :

NTHD2110TT1G

Manufacturer
Rochester Electronics
Description
MOSFET P-CH 12V 4.5A CHIPFET
Catalog
Transistors - FETs, MOSFETs - Single
Availability
45000 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 27 - Dec 01 2024
PDF
NTHD2110TT1G PDF
Type Description
Series:-
Package:Bulk
Part Status:Obsolete
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):12 V
Current - Continuous Drain (Id) @ 25°C:4.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
Rds On (Max) @ Id, Vgs:40mOhm @ 6.4A, 4.5V
Vgs(th) (Max) @ Id:850mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs:14 nC @ 4.5 V
Vgs (Max):±8V
Input Capacitance (Ciss) (Max) @ Vds:1.072 pF @ 6 V
FET Feature:-
Power Dissipation (Max):1.1W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:ChipFET™
Package / Case:8-SMD, Flat Lead
NTHD2110TT1G is available at GangBo-ic.com, Please review product page below for detailed information, including NTHD2110TT1G price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for NTHD2110TT1G to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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