MOSFET N-CH 100V 5.6A TO220AB
IC UART I2C/SPI 128 BYTE 40QFN
Type | Description |
---|---|
Series: | - |
Package: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 100 V |
Current - Continuous Drain (Id) @ 25°C: | 5.6A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 540mOhm @ 3.4A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 8.3 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 180 pF @ 25 V |
FET Feature: | - |
Power Dissipation (Max): | 43W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-220AB |
Package / Case: | TO-220-3 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
SIRA32DP-T1-RE3Vishay / Siliconix |
MOSFET N-CH 25V 60A PPAK SO-8 |
|
SIHG120N60E-GE3Vishay / Siliconix |
MOSFET N-CH 600V 25A TO247AC |
|
TK31N60W5,S1VFToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 600V 30.8A TO247 |
|
AUIRFR2607ZTRLRochester Electronics |
AUTOMOTIVE POWER MOSFET |
|
NVD5C454NT4GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 19A/82A DPAK |
|
MTB50P03HDLT4GSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 30V 50A D2PAK |
|
SIHG61N65EF-GE3Vishay / Siliconix |
MOSFET N-CH 650V 64A TO247AC |
|
FDD5N50NZFTMSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 500V 3.7A DPAK |
|
NTHD2110TT1GRochester Electronics |
MOSFET P-CH 12V 4.5A CHIPFET |
|
APT8020JLLRoving Networks / Microchip Technology |
MOSFET N-CH 800V 33A ISOTOP |
|
ISL9N322AS3STRochester Electronics |
N-CHANNEL POWER MOSFET |
|
6HP04MH-TL-WSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 60V 370MA SC70FL |
|
RSD140P06TLROHM Semiconductor |
MOSFET P-CH 60V 14A CPT3 |