MOSFET N-CH 650V 5A PWRFLAT VHV
HPC-SERIES DC TO HVDC CONVERTER,
Type | Description |
---|---|
Series: | Automotive, AEC-Q101 |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 650 V |
Current - Continuous Drain (Id) @ 25°C: | 5A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 1.5Ohm @ 2.5A, 10V |
Vgs(th) (Max) @ Id: | 5V @ 100µA |
Gate Charge (Qg) (Max) @ Vgs: | 11.7 nC @ 10 V |
Vgs (Max): | ±30V |
Input Capacitance (Ciss) (Max) @ Vds: | 270 pF @ 100 V |
FET Feature: | - |
Power Dissipation (Max): | 79W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | PowerFlat™ (5x6) VHV |
Package / Case: | 8-PowerVDFN |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
IPD65R380C6ATMA1IR (Infineon Technologies) |
MOSFET N-CH 650V 10.6A TO252-3 |
|
FCD260N65S3Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 650V 12A TO252 |
|
HUF76423S3STRochester Electronics |
N-CHANNEL POWER MOSFET |
|
IRF510PBFVishay / Siliconix |
MOSFET N-CH 100V 5.6A TO220AB |
|
SIRA32DP-T1-RE3Vishay / Siliconix |
MOSFET N-CH 25V 60A PPAK SO-8 |
|
SIHG120N60E-GE3Vishay / Siliconix |
MOSFET N-CH 600V 25A TO247AC |
|
TK31N60W5,S1VFToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 600V 30.8A TO247 |
|
AUIRFR2607ZTRLRochester Electronics |
AUTOMOTIVE POWER MOSFET |
|
NVD5C454NT4GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 19A/82A DPAK |
|
MTB50P03HDLT4GSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 30V 50A D2PAK |
|
SIHG61N65EF-GE3Vishay / Siliconix |
MOSFET N-CH 650V 64A TO247AC |
|
FDD5N50NZFTMSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 500V 3.7A DPAK |
|
NTHD2110TT1GRochester Electronics |
MOSFET P-CH 12V 4.5A CHIPFET |