MOSFET N-CH 100V 80A TDSON
Type | Description |
---|---|
Series: | OptiMOS™ |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 100 V |
Current - Continuous Drain (Id) @ 25°C: | 80A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 6V, 10V |
Rds On (Max) @ Id, Vgs: | 7mOhm @ 40A, 10V |
Vgs(th) (Max) @ Id: | 3.8V @ 50µA |
Gate Charge (Qg) (Max) @ Vgs: | 38 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 2700 pF @ 50 V |
FET Feature: | - |
Power Dissipation (Max): | 2.5W (Ta), 83W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | PG-TDSON-8-7 |
Package / Case: | 8-PowerTDFN |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
XP264N0301TR-GTorex Semiconductor Ltd. |
MOSFET N-CH 60V 300MA SOT23 |
|
IPB65R225C7ATMA2IR (Infineon Technologies) |
MOSFET N-CH 650V 11A TO263-3 |
|
IRF2204PBFIR (Infineon Technologies) |
MOSFET N-CH 40V 210A TO220AB |
|
R6030ENZ4C13ROHM Semiconductor |
MOSFET N-CH 600V 30A TO247 |
|
IPS075N03LGRochester Electronics |
N-CHANNEL POWER MOSFET |
|
PMV30UN2RNexperia |
MOSFET N-CH 20V 4.2A TO236AB |
|
HUFA75307D3STRochester Electronics |
MOSFET N-CH 55V 15A TO252AA |
|
PSMN1R8-30PL,127Nexperia |
MOSFET N-CH 30V 100A TO220AB |
|
SSM3J15CT(TPL3)Toshiba Electronic Devices and Storage Corporation |
MOSFET P-CH 30V 100MA CST3 |
|
SI7309DN-T1-GE3Vishay / Siliconix |
MOSFET P-CH 60V 8A PPAK1212-8 |
|
IXTY02N120PWickmann / Littelfuse |
MOSFET N-CH 1200V 200MA TO252 |
|
IPU50R3K0CEBKMA1Rochester Electronics |
MOSFET N-CH 500V 1.7A TO251-3 |
|
VN0550N3-GRoving Networks / Microchip Technology |
MOSFET N-CH 500V 50MA TO92-3 |