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IPI037N08N3GXKSA1

IPI037N08N3GXKSA1

MOSFET N-CH 80V 141A TO262-3

IPI037N08N3GXKSA1

IPI037N08N3GXKSA1

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Part No :

IPI037N08N3GXKSA1

Manufacturer
Rochester Electronics
Description
MOSFET N-CH 80V 141A TO262-3
Catalog
Transistors - FETs, MOSFETs - Single
Availability
36500 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 06 - Nov 10 2024
PDF
IPI037N08N3GXKSA1 PDF
Type Description
Series:TrenchMOS™
Package:Bulk
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):80 V
Current - Continuous Drain (Id) @ 25°C:141A (Tc)
Drive Voltage (Max Rds On, Min Rds On):-
Rds On (Max) @ Id, Vgs:3.75mOhm @ 100A, 10V
Vgs(th) (Max) @ Id:3.5V @ 155µA
Gate Charge (Qg) (Max) @ Vgs:117 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:8110 pF @ 40 V
FET Feature:-
Power Dissipation (Max):214W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO262-3
Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
IPI037N08N3GXKSA1 is available at GangBo-ic.com, Please review product page below for detailed information, including IPI037N08N3GXKSA1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IPI037N08N3GXKSA1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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