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TK11P65W,RQ

TK11P65W,RQ

MOSFET N-CH 650V 11.1A DPAK

TK11P65W,RQ

TK11P65W,RQ

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Part No :

TK11P65W,RQ

Manufacturer
Toshiba Electronic Devices and Storage Corporation
Description
MOSFET N-CH 650V 11.1A DPAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
544254 pieces
Shipped from
HK warehouse
Expected Shipping Date
Dec 28 - Jan 01 2024
PDF
TK11P65W,RQ PDF
Type Description
Series:DTMOSIV
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:11.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:440mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id:3.5V @ 450µA
Gate Charge (Qg) (Max) @ Vgs:25 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:890 pF @ 300 V
FET Feature:-
Power Dissipation (Max):100W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DPAK
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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