MOSFET N-CH 100V 64A D2PAK
Type | Description |
---|---|
Series: | TrenchMOS™ |
Package: | Bulk |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 100 V |
Current - Continuous Drain (Id) @ 25°C: | 64A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 19mOhm @ 25A, 10V |
Vgs(th) (Max) @ Id: | 4V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | 53 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 3.4 pF @ 25 V |
FET Feature: | - |
Power Dissipation (Max): | 200W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | D2PAK |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
SI7455DP-T1-E3Vishay / Siliconix |
MOSFET P-CH 80V 28A PPAK SO-8 |
|
AUIRFR4615IR (Infineon Technologies) |
MOSFET N-CH 150V 33A DPAK |
|
IRLR2703PBFRochester Electronics |
MOSFET N-CH 30V 23A DPAK |
|
R6007ENXROHM Semiconductor |
MOSFET N-CH 600V 7A TO220FM |
|
BSO083N03MSGRochester Electronics |
N-CHANNEL POWER MOSFET |
|
SI2301CDS-T1-E3Vishay / Siliconix |
MOSFET P-CH 20V 3.1A SOT23-3 |
|
IRF840ASTRLPBFVishay / Siliconix |
MOSFET N-CH 500V 8A D2PAK |
|
STD9N65M2STMicroelectronics |
MOSFET N-CH 650V 5A DPAK |
|
FDC5614PSanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 60V 3A SUPERSOT6 |
|
TN2106N3-GRoving Networks / Microchip Technology |
MOSFET N-CH 60V 300MA TO92-3 |
|
SPP15N65C3XKSA1Rochester Electronics |
N-CHANNEL POWER MOSFET |
|
CSD18533KCSTexas Instruments |
MOSFET N-CH 60V 72A/100A TO220-3 |
|
DMTH6004SK3-13Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V 100A TO252 |