MOSFET N-CH 80V 70A TO220-3
Type | Description |
---|---|
Series: | OptiMOS™ |
Package: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 80 V |
Current - Continuous Drain (Id) @ 25°C: | 70A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 6V, 10V |
Rds On (Max) @ Id, Vgs: | 10mOhm @ 46A, 10V |
Vgs(th) (Max) @ Id: | 3.5V @ 46µA |
Gate Charge (Qg) (Max) @ Vgs: | 35 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 2410 pF @ 40 V |
FET Feature: | - |
Power Dissipation (Max): | 100W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | PG-TO220-3 |
Package / Case: | TO-220-3 |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
BUK763R4-30B,118Nexperia |
MOSFET N-CH 30V 75A D2PAK |
|
FDP036N10ASanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 120A TO220-3 |
|
IRLL110TRPBFVishay / Siliconix |
MOSFET N-CH 100V 1.5A SOT223 |
|
2SJ492-AZRochester Electronics |
P-CHANNEL POWER MOSFET |
|
STB100N10F7STMicroelectronics |
MOSFET N-CH 100V 80A D2PAK |
|
BUK7619-100B,118Rochester Electronics |
MOSFET N-CH 100V 64A D2PAK |
|
SI7455DP-T1-E3Vishay / Siliconix |
MOSFET P-CH 80V 28A PPAK SO-8 |
|
AUIRFR4615IR (Infineon Technologies) |
MOSFET N-CH 150V 33A DPAK |
|
IRLR2703PBFRochester Electronics |
MOSFET N-CH 30V 23A DPAK |
|
R6007ENXROHM Semiconductor |
MOSFET N-CH 600V 7A TO220FM |
|
BSO083N03MSGRochester Electronics |
N-CHANNEL POWER MOSFET |
|
SI2301CDS-T1-E3Vishay / Siliconix |
MOSFET P-CH 20V 3.1A SOT23-3 |
|
IRF840ASTRLPBFVishay / Siliconix |
MOSFET N-CH 500V 8A D2PAK |