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SQP10250E_GE3

SQP10250E_GE3

MOSFET N-CH 250V 53A TO220AB

SQP10250E_GE3

SQP10250E_GE3

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Part No :

SQP10250E_GE3

Manufacturer
Vishay / Siliconix
Description
MOSFET N-CH 250V 53A TO220AB
Catalog
Transistors - FETs, MOSFETs - Single
Availability
944094 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 26 - Nov 30 2024
PDF
SQP10250E_GE3 PDF
Type Description
Series:Automotive, AEC-Q101, TrenchFET®
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):250 V
Current - Continuous Drain (Id) @ 25°C:53A (Tc)
Drive Voltage (Max Rds On, Min Rds On):7.5V, 10V
Rds On (Max) @ Id, Vgs:30mOhm @ 15A, 10V
Vgs(th) (Max) @ Id:3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:75 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:4050 pF @ 25 V
FET Feature:-
Power Dissipation (Max):250W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220AB
Package / Case:TO-220-3
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