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SCT2H12NZGC11

SCT2H12NZGC11

SICFET N-CH 1700V 3.7A TO3PFM

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SCT2H12NZGC11

SCT2H12NZGC11

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Part No :

SCT2H12NZGC11

Manufacturer
ROHM Semiconductor
Description
SICFET N-CH 1700V 3.7A TO3PFM
Catalog
Transistors - FETs, MOSFETs - Single
Availability
904090 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 23 - Nov 27 2024
PDF
SCT2H12NZGC11 PDF
Type Description
Series:-
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss):1700 V
Current - Continuous Drain (Id) @ 25°C:3.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On):18V
Rds On (Max) @ Id, Vgs:1.5Ohm @ 1.1A, 18V
Vgs(th) (Max) @ Id:4V @ 900µA
Gate Charge (Qg) (Max) @ Vgs:14 nC @ 18 V
Vgs (Max):+22V, -6V
Input Capacitance (Ciss) (Max) @ Vds:184 pF @ 800 V
FET Feature:-
Power Dissipation (Max):35W (Tc)
Operating Temperature:175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-3PFM
Package / Case:TO-3PFM, SC-93-3
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GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

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