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SCT50N120

SCT50N120

SICFET N-CH 1200V 65A HIP247

SCT50N120

SCT50N120

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Part No :

SCT50N120

Manufacturer
STMicroelectronics
Description
SICFET N-CH 1200V 65A HIP247
Catalog
Transistors - FETs, MOSFETs - Single
Availability
694069 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 23 - Nov 27 2024
PDF
SCT50N120 PDF
Type Description
Series:-
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss):1200 V
Current - Continuous Drain (Id) @ 25°C:65A (Tc)
Drive Voltage (Max Rds On, Min Rds On):20V
Rds On (Max) @ Id, Vgs:69mOhm @ 40A, 20V
Vgs(th) (Max) @ Id:3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:122 nC @ 20 V
Vgs (Max):+25V, -10V
Input Capacitance (Ciss) (Max) @ Vds:1900 pF @ 400 V
FET Feature:-
Power Dissipation (Max):318W (Tc)
Operating Temperature:-55°C ~ 200°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:HiP247™
Package / Case:TO-247-3
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