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IQE006NE2LM5CGATMA1

IQE006NE2LM5CGATMA1

MOSFET N-CH 25V 41A/298A IPAK

IQE006NE2LM5CGATMA1

IQE006NE2LM5CGATMA1

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Part No :

IQE006NE2LM5CGATMA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET N-CH 25V 41A/298A IPAK
Catalog
Transistors - FETs, MOSFETs - Single
Availability
14775 pieces
Shipped from
HK warehouse
Expected Shipping Date
Dec 29 - Jan 02 2024
Type Description
Series:OptiMOS™ 5
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):25 V
Current - Continuous Drain (Id) @ 25°C:41A (Ta), 298A (Tc)
Drive Voltage (Max Rds On, Min Rds On):-
Rds On (Max) @ Id, Vgs:650mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:82.1 nC @ 10 V
Vgs (Max):±16V
Input Capacitance (Ciss) (Max) @ Vds:5453 pF @ 12 V
FET Feature:-
Power Dissipation (Max):2.1W (Ta), 89W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:IPAK (TO-251AA)
Package / Case:TO-251-3 Short Leads, IPak, TO-251AA
IQE006NE2LM5CGATMA1 is available at GangBo-ic.com, Please review product page below for detailed information, including IQE006NE2LM5CGATMA1 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IQE006NE2LM5CGATMA1 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

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